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MJE13003 - BJT BIP NPN 2A 400V
Part ID: VT-1581
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2 QAR
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2 QAR
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Specifications
Product Category: Bipolar Transistors - BJT
RoHS: N
Mounting Style: Through Hole
Package / Case: TO-225-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 400 V
Collector- Base Voltage VCBO: 100 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 1.5 A
Pd - Power Dissipation: 1.4 W
Gain Bandwidth Product fT: 3 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Height: 11.04 mm
Length: 7.74 mm
Technology: Si
Width: 2.66 mm
Continuous Collector Current: 1.5 A
DC Collector/Base Gain hfe Min: 8
BJTs - Bipolar Transistors
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