2N2905 PNP Bipolar Junction Transistor, Metal Package

The 2N2905 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications.
It provides reliable performance with moderate current handling and stable electrical characteristics.
The device supports collector-emitter voltages suitable for low to medium power circuits.
Its metal package enables effective heat dissipation and mechanical durability.
Typical applications include signal amplification, driver stages, switching circuits, and industrial control systems.

• PNP Bipolar Junction Structure for general-purpose operation

• Metal Package Construction for improved thermal performance

• Moderate Collector Current Capability for small power circuits

• Stable DC Current Gain across operating conditions

• Low Saturation Voltage for efficient switching

• Through-Hole Mounting Format for secure mechanical attachment

• Device Type | PNP Bipolar Junction Transistor (BJT)

• Polarity | PNP

• Maximum Collector-Emitter Voltage (Vce) | 60 V

• Maximum Collector Current (Ic) | 0.6 A

• Collector-Base Voltage (Vcb) | 60 V

• Emitter-Base Voltage (Veb) | 5 V

• Power Dissipation | Approximately 1.8 W

• DC Current Gain (hFE) | 20 to 60

• Transition Frequency (fT) | Approximately 20 MHz

• Operating Temperature Range | −65 °C to 200 °C

• Package Type | TO-39 Metal Can

• 3D Model
• Datasheet