MJE13003 NPN Bipolar Junction Transistor – 2A 400V TO-220

The MJE13003 is a high-voltage NPN bipolar junction transistor designed for medium-current switching and power control applications. It supports a collector-emitter voltage of up to 400V and continuous collector current up to 2A, making it ideal for off-line switching power supplies, inverters, ballast circuits, and high-voltage driver stages. With fast switching performance, low saturation voltage, and strong thermal handling in a TO-220 package, the MJE13003 is widely used in SMPS designs and power electronics.

• High-voltage NPN bipolar transistor
• Collector-emitter voltage up to 400V
• Continuous collector current up to 2A
• Optimized for switching power applications
• Fast switching performance
• Low saturation voltage for improved efficiency
• High power dissipation capability
• Suitable for off-line power supplies
• Reliable repetitive switching operation
• TO-220 package for better heat dissipation
• Stable DC gain characteristics
• Suitable for inverter and ballast circuits
• High-voltage driver capability
• Easy mounting with heatsink support

• Model: MJE13003
• Device Type: NPN Bipolar Junction Transistor (BJT)
• Polarity: NPN
• Collector-Emitter Voltage (Vce): 400V
• Collector-Base Voltage (Vcb): 700V
• Emitter-Base Voltage (Veb): 9V
• Maximum Collector Current (Ic): 2A
• Power Dissipation: Approximately 75W
• DC Current Gain (hFE): 8 – 40
• Transition Frequency (fT): Approximately 4MHz
• Package Type: TO-220
• Mounting Type: Through-Hole
• Operating Temperature Range: -55°C to +150°C
• Application Type: High-Voltage Switching

• Datasheet

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