IRF540 N-Channel Power MOSFET

The IRF540 is an N-channel power MOSFET designed for medium- to high-power switching applications.
It supports a drain-source voltage rating of 100 V and a continuous drain current of up to 28 A under proper thermal conditions.
The device features low on-state resistance, enabling efficient power conversion and reduced conduction losses.
It is suitable for use in low- and medium-frequency switching circuits.
Typical applications include power supplies, motor drivers, DC–DC converters, and load switching circuits.

• N-Channel MOSFET Structure for power switching applications

• High Drain Current Capability up to 28 A

• Low Drain-Source On-Resistance for efficient conduction

• High Drain-Source Voltage Rating of 100 V

• Fast Switching Characteristics suitable for power control

• Avalanche Energy Rated for rugged operation

• Through-Hole Power Package supporting heatsink mounting

• Device Type | N-Channel Power MOSFET

• Channel Type | N-Channel

• Maximum Drain-Source Voltage (Vds) | 100 V

• Continuous Drain Current (Id) | 28 A

• Gate-Source Voltage (Vgs) | ±20 V

• Drain-Source On-Resistance (Rds(on)) | Approximately 0.077 Ω

• Total Gate Charge (Qg) | Approximately 71 nC

• Power Dissipation | Approximately 150 W

• Operating Temperature Range | −55 °C to 175 °C

• Package Type | TO-220

• 3D Model
• Datasheet