TIP41 NPN Power Bipolar Junction Transistor

The TIP41 is an NPN power bipolar junction transistor designed for medium-power amplification and switching applications.
It supports relatively high collector current and is suitable for use in linear and switching power stages.
The device operates with collector-emitter voltage ratings appropriate for power control circuits.
Its construction allows effective heat dissipation when mounted to a suitable heatsink.
Typical applications include audio power amplifiers, voltage regulators, motor drivers, and general-purpose power switching.

• NPN Bipolar Junction Structure for power applications

• High Collector Current Capability up to 6 A

• Moderate Collector-Emitter Voltage Rating for power control circuits

• Stable DC Current Gain over operating conditions

• Low Collector-Emitter Saturation Voltage for efficient switching

• Through-Hole Power Package suitable for heatsinking

• Device Type | NPN Bipolar Junction Transistor (BJT)

• Polarity | NPN

• Maximum Collector-Emitter Voltage (Vce) | 40 V

• Maximum Collector Current (Ic) | 6 A

• Collector-Base Voltage (Vcb) | 40 V

• Emitter-Base Voltage (Veb) | 5 V

• Power Dissipation | Approximately 65 W

• DC Current Gain (hFE) | 15 to 75

• Transition Frequency (fT) | Approximately 3 MHz

• Operating Temperature Range | −65 °C to 150 °C

• Package Type | TO-220

• 3D Model
• Datasheet