IRF4905 P-Channel Power MOSFET

The IRF4905 is a P-channel power MOSFET designed for high-current and low-voltage switching applications.
It supports a drain-source voltage rating of 55 V and is suitable for use in high-side switching configurations.
The device features low drain-source on-resistance to reduce conduction losses during operation.
It is optimized for efficient switching in power control and distribution circuits.
Typical applications include high-side load switching, power management, motor control, and DC power systems.

• P-Channel MOSFET Structure for high-side switching

• High Continuous Drain Current Capability up to 74 A

• Low Drain-Source On-Resistance for reduced power loss

• Low-Voltage Power Operation suitable for DC systems

• Fast Switching Characteristics for power control

• Avalanche Energy Rated for rugged operation

• Through-Hole Power Package supporting heatsink mounting

• Device Type | P-Channel Power MOSFET

• Channel Type | P-Channel

• Maximum Drain-Source Voltage (Vds) | −55 V

• Continuous Drain Current (Id) | −74 A

• Gate-Source Voltage (Vgs) | ±20 V

• Drain-Source On-Resistance (Rds(on)) | Approximately 0.02 Ω

• Total Gate Charge (Qg) | Approximately 170 nC

• Power Dissipation | Approximately 200 W

• Operating Temperature Range | −55 °C to 175 °C

• Package Type | TO-220

• 3D Model
• Datasheet