MJE13003 NPN Bipolar Junction Transistor, 2 A 400 V

The MJE13003 is an NPN bipolar junction transistor designed for high-voltage and medium-current switching applications.
It supports a collector-emitter voltage rating of 400 V and a continuous collector current of up to 2 A.
The device is optimized for efficient switching performance in off-line power and control circuits.
It offers stable electrical characteristics suitable for repetitive switching operation.
Typical applications include switching power supplies, inverters, ballast circuits, and general high-voltage drivers.

• NPN Bipolar Junction Structure for high-voltage switching

• High Collector-Emitter Voltage Rating up to 400 V

• Continuous Collector Current Capability up to 2 A

• Low Saturation Voltage supporting efficient switching

• Fast Switching Characteristics for power control circuits

• High Power Dissipation Capability in through-hole packages

• Device Type | NPN Bipolar Junction Transistor (BJT)

• Polarity | NPN

• Maximum Collector-Emitter Voltage (Vce) | 400 V

• Maximum Collector Current (Ic) | 2 A

• Collector-Base Voltage (Vcb) | 700 V

• Emitter-Base Voltage (Veb) | 9 V

• Power Dissipation | Approximately 75 W

• DC Current Gain (hFE) | 8 to 40

• Transition Frequency (fT) | Approximately 4 MHz

• Operating Temperature Range | −55 °C to 150 °C

• Package Type | TO-220

• Datasheet