TIP122 NPN Darlington Bipolar Junction Transistor

The TIP122 is an NPN Darlington bipolar junction transistor designed for high-current switching and amplification applications.
It integrates two transistors in a Darlington configuration to achieve very high DC current gain.
The device supports collector currents suitable for power control and low-speed switching circuits.
It operates with moderate collector-emitter voltage ratings in power electronics designs.
Typical applications include motor drivers, relay control, solenoid drivers, and general-purpose power switching.

• NPN Darlington Configuration for high DC current gain

• High Collector Current Capability up to 5 A

• Low Base Drive Requirement due to Darlington structure

• Integrated Base-Emitter Resistors for stable operation

• Low-Speed Switching Performance suitable for power control

• Through-Hole Power Package supporting heat dissipation

• Device Type | NPN Darlington Bipolar Junction Transistor

• Polarity | NPN

• Maximum Collector-Emitter Voltage (Vce) | 100 V

• Maximum Collector Current (Ic) | 5 A

• Collector-Base Voltage (Vcb) | 100 V

• Emitter-Base Voltage (Veb) | 5 V

• DC Current Gain (hFE) | ≥ 1000

• Collector-Emitter Saturation Voltage (Typical) | 2 V

• Power Dissipation | Approximately 65 W

• Operating Temperature Range | −65 °C to 150 °C

• Package Type | TO-220

• 3D Model
• Datasheet